Repositório do Conhecimento Institucional do Centro Universitário FEI
 

Engenharia Elétrica

URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/21

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20042

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Periódico: search.filters.ispartof.Proceedings - Electrochemical SocietyAssunto: search.filters.subject.Analog circuits

Resultados da Pesquisa

Agora exibindo 1 - 2 de 2
  • N/D
    Artigo de evento 0 Citação(ões) na Scopus
    Analysis of harmonic distortion in graded-channel SOI MOSFETS at high temperatures
    (2004-09-11) Marcelo Antonio Pavanello; CERDEIRA, A.; MARTINO, J. A.; ALEMAN, M. A.; FLANDRE, D.
    An evaluation of the harmonic distortion in conventional and graded-channel SOI MOSFETs is performed from room temperature up to 423 K. The total harmonic distortion and third order harmonic distortion have been adopted as figures of merit. It is shown that the total harmonic distortion decreases as the length of the lightly doped region is increased in GC transistors, due to reduction of the effective voltage amplitude that is applied on the conventionally doped part of the channel. On the other hand, the third order harmonic distortion increases with the length of lightly doped region. The temperature increase tends to reduce the total harmonic distortion and the third order harmonic.
  • N/D
    Artigo de evento 2 Citação(ões) na Scopus
    A fully analytical continuous model for graded-channel SOI MOSFET for analog applications
    (2004-09-11) Michelly De Souza; Marcelo Antonio Pavanello; INIGUEZ, B.; FLANDRE, D.
    In this work an analytical model of Graded-Channel (GC) Silicon-On-Insulator (SOI) nMOSFETs is proposed for analog applications. The model is based on a series association of two conventional SOI nMOSFETs each representing one part of the GC SOI nMOSFET channel. From this assumption, we propose a current model that considers the GC SOI MOSFET as a conventional SOI transistor, represented by one part of the channel only, in which the drain voltage is modulated by the remaining part. The proposed model has been verified through the comparison between its results and experimental measurements, presenting a good agreement. Some important characteristics for analog circuits, such as transconductance and Early voltage, are compared between the model results and experimental curves.