Engenharia Elétrica
URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/21
Navegar
2 resultados
Resultados da Pesquisa
- NBTI Dependence on Temperature in Junctionless Nanowire Transistors(2021-07-27) GRAZIANO, N.; TREVISOLI, R.; Rodrigo, Doria©2021 IEEE.This paper discusses the nature of degradation by NBTI effect in pMOS junctionless devices when varying the temperature. The results were obtained through simulations validated to experimental data. Devices with different dimensions and doping, have been subjected to a temperature range that varies between 270 and 380 K. The simulations were performed for different values of VGT and as a result it is possible to observe that when increasing temperature up to 340 K, the threshold voltage variation due to NBTI is also increased. However, for larger temperatures the NBTI effect seems to stabilize or even reduce.
- Junctionless Nanowire Transistors Based Common-Source Current Mirror(2021-08-27) SHIBUTANI, A. B.; SOUZA, M. D.; TREVISOLI, R.; Rodrigo Doria©2021 IEEE.In this article, a current mirror built with junctionless nanowire transistors (JNTs) is investigated for the first time. The study explores the influence of transistors' width on the mirroring precision for input and output devices with different dimensions. The work has been performed through numerical simulations validated with experimental data and showed that the variation of devices' width impacts the output characteristics differently from usually observed in current mirrors formed by inversion mode devices.