Departamento de Física

Resultados da Pesquisa

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Comparative study of the proton beam effects between the conventional and Circular-Gate MOSFETs
(2012) Cirne K.; Silveira M.A.G.; Santos R.B.B.; Gimenez S.P.; Barbosa M.D.L.; Tabacniks M.H.; Added N.; Medina N.H.; De Melo W.R.; Seixas Jr. L.E.; De Lima J.A.
The study of ionizing radiation effects on semiconductor devices is of great relevance for the global technological development and is a necessity in some strategic areas in Brazil. This work presents preliminary results of radiation effects in MOSFETs that were exposed to 3.2 Grad radiation dose produced by a 2.6-MeV proton beam. The focus of this work was to electrically characterize a Rectangular-Gate MOSFET (RGT) and a Circular-Gate MOSFET (CGT), manufactured with the On Semiconductor 0.5 μm standard CMOS fabrication process and to verify a suitable geometry for space applications. During the experiment, I DS × V GS curves were measured. After irradiation, the RGT off-state current (I OFF) increased approximately two orders of magnitude reaching practically the same value of the I OFF in the CGT, which only doubled its value. © 2011 Elsevier B.V. All rights reserved.