Departamento de Física
URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/785
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2 resultados
Resultados da Pesquisa
- Testing a Fault Tolerant Mixed-Signal Design Under TID and Heavy Ions(2021-01-05) GONZALEZ, C. J.; MACHADO, D. N.; VAZ, R. G.; VILAS BOAS, A. C.; GONLALEZ, O. L.; PUCHNER, H.; ADDED, N.; MACCHIONE, E. L. A.; AGUIAR, V. A. P.; KASTENSMIDT, F. L.; MEDINA, N. H.; Marcilei Aparecida Guazzelli; BALEN, T. R.© 2021, Brazilian Microelectronics Society. All rights reserved.— This work presents results of three distinct radiation tests performed upon a fault tolerant data acquisition system comprising a design diversity redundancy technique. The first and second experiments are Total Ionizing Dose (TID) essays, comprising gamma and X-ray irradiations. The last experiment considers single event effects, in which two heavy ion irradiation campaigns are carried out. The case study system comprises three analog-to-digital converters and two software-based vot-ers, besides additional software and hardware resources used for controlling, monitoring and memory manage-ment. The applied Diversity Triple Modular Redundancy (DTMR) technique, comprises different levels of diversity (temporal and architectural). The circuit was designed in a programmable System-on-Chip (PSoC), fabricated in a 130nm CMOS technology process. Results show that the technique may increase the lifetime of the system under TID if comparing with a non-redundant implementation. Considering the heavy ions experiments the system was proved effective to tolerate 100% of the observed errors originated in the converters, while errors in the processing unit present a higher criticality. Critical errors occur-ring in one of the voters were also observed. A second heavy ion campaign was then carried out to investigate the voters reliability, comparing the the dynamic cross section of three different software-based voter schemes im-plemented in the considered PSoC.
- Analyzing the influence of the angles of incidence on SEU and MBU events induced by low LET heavy ions in a 28-nm SRAM-based FPGA(2017) TONFAT, J.; KASTENSMIDT, F. L.; ARTOLA, L.; HUBERT, G.; MEDINA, N. H.; ADDED, N.; AGUIAR, V. A. P.; AGUIRRE, F.; MACCHIONE, E. L. A.; Marcilei Aparecida Guazzelli© 2016 IEEE.This work highlights the impact of low LET heavy ions particles on the reliability of 28-nm Bulk SRAM cells from 4rtix-7 FPGA. Radiation tests showed significant differences in he MBU cross section of configuration (CRAM) and BRAM memory cells under various angles of incidence. Radiation results re compared with simulations at transistor level by using the ioft error tool, MUSCA SEP3 (MUlti-SCAle Single Event henomenon Prediction Platform) coupled with circuit imulations with the aim to analyze the differences of upset ensitivity as a function of layout SRAM. This analysis leads to etermine the correct layout and technology used in the tested PGA. By using the detailed classification of MBU events, it is ossible to analyze the effectiveness of correction mechanisms of he FPGA configuration memory.