Departamento de Física
URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/785
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Resultados da Pesquisa
Artigo de evento 3 Citação(ões) na Scopus Radiation effect mechanisms in electronic devices(2013-12-01) Marcilei Aparecida Guazzelli; Roberto Santos; LEITE, F.; CUNHA, F.; CIRNE, K. H.; MEDINA, N. H.; ADDED, N.; AGUIAR, V. A. P.© Copyright owned by the author(s) under the terms of the Creative Commons Attribution-NonCommercial-ShareAlike Licence.In this work, P- and N-MOSFETs (Metal Oxide Semiconductor Field Effect Transistor) were submitted to X-ray and ion beams. CD 4007, a commercial off-the-shelf integrated circuit composed of six transistors, three P-type and three N-type, in a single package, was used. The integrated circuits were exposed to 60 MeV 35Cl ion beams using the São Paulo 8UD Pelletron Accelerator and 10 keV X-ray radiation, using a Shimadzu XRD-7000 X-ray diffractometer. The total dose effects due to ionizing radiation in MOSFET were analyzed. The results indicate Vth depends on the absorbed dose and dose rate. The deviation of Vth is higher for P-MOS, while the change in slope is higher for N-MOS. TID (Total Ionizing Dose) caused by heavy ion does not seem to affect mobility. After heat treatment, the device establishes a different equilibrium state compared to that achieved at room temperature. The heat treatment worsens the P-type characteristics and improves the N-type.- Isomeric state in the odd-odd 68Ga nucleus(2022-01-05) ESCUDEIRO, R.; VASCONCELOS, C. E. C; ALLEGRO, P. R. P.; MEDINA, N. H.; TUFEN, D. L.; ADDED, N.; AGUIAR, V. A. P.; ALBERTON. S. G. P. N.; ALCANTARA-NUNEZ, J.; Marcilei Aparecida Guazzelli; MACCHIONE. E. L. A.; OLIVEIRA, J. R. B.; RIBAS, R. V.; SCARDUELLI, V. B.© 2022 Institute of Physics Publishing. All rights reserved.The half life of the 7− isomeric state of the odd-odd 68Ga nucleus was measured using a particle-γ delayed coincidence technique. The 68Ga nuclei were produced using the fusion-evaporation reaction 55Mn(16O, 2pn)68Ga at 55 MeV incident beam energy. The beam was produced by the 8 MV Pelletron accelerator of the Nuclear Physics Open Laboratory of the University of São Paulo. The half life was measured using the Isomeric State Measurement System (SISMEI). The obtained value was 60.83(25) ns, compatible with previous measurements. The 68Ga excited states were well described with the Large Scale Shell Model using the JUN45 residual interaction.
- First successful SEE measurements with heavy ions in Brazil(2014-07-18) MEDINA, N. H.; Marcilei Aparecida Guazzelli; ADDED, N.; AGUIAR. V. A . P.; Renato Giacomini; MACHIONE, E. L. A.; DE MELO, M. A. A.; SANTOS, R. B. B.; SEIXAS, L. E.© 2014 IEEE.In this work, the first successful SEE measurements with heavy ions in Brazil is reported. The heavy ions were produced at the São Paulo 8 UD Pelletron accelerator. 12C, 16O, 19F, 28Si, 35Cl, 63Cu and 107Ag heavy ion beams were used to test a commercial off-the-shelf transistor. During irradiation, the response of a pMOS transistor was continuously monitored to measure the SEE events. In order to achieve a uniform low intensity beam the heavy ions were Rutherford scattered at 15 by a 275 μg/cm2 gold foil.