Repositório do Conhecimento Institucional do Centro Universitário FEI
 

Departamento de Física

URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/785

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Filtros

2013 - 20152

Configurações

Autor: search.filters.author.Silveira M.A.G.Periódico: search.filters.ispartof.ECS Transactions

Resultados da Pesquisa

Agora exibindo 1 - 2 de 2
  • N/D
    Artigo de evento 4 Citação(ões) na Scopus
    Using the wave layout style to boost the digital ICs electrical performance in the radioactive environment
    (2015) Navarenho-De-Souza R.; Silveira M.A.G.; Gimenez S.P.
    © The Electrochemical Society.This paper presents an experimental comparative study between the Metal-Oxide-Semiconductor Field Effect Transistors (MOSFET) manufactured with the Wave ("S" gate geometry) and the standard layout (CnM) considering the Total Ionizing Dose (TID) effects and taking into account that the devices were biased during the radiation procedure to emphasize the effects. Due to the special layout characteristics and the different effects of the bird's beaks regions of the Wave MOSFET (WnM) compared to the conventional rectangular layout, this innovative layout proposal for MOSFETs is able to improve the device TID tolerance without adding cost to the Complementary MOS (CMOS) manufacturing process.
  • N/D
    Artigo de evento 0 Citação(ões) na Scopus
    Comparative experimental study between tensile and compressive uniaxially stressed nmugfets under x-ray radiation focusing on analog behavior
    (2013) Peruzzi V.V.; Gimenez S.P.; Agopian P.G.D.; Silveira M.A.G.; Martino J.A.; Simoen E.; Claeys C.
    This paper describes a detailed experimental comparative study between nMuGFETs implemented with tensile and compressive stresses when submitted to X-ray radiation, taking into account different doses and different channel widths and lengths of the devices. The experimental results show that the intrinsic voltage gain and the unit voltage gain frequency for tensile stressed devices always present a higher immunity to the X-ray radiation (up to 50 Mrad). © The Electrochemical Society.