Departamento de Física
URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/785
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3 resultados
Resultados da Pesquisa
- Modeling of MOSFETs Altered by Ionizing Radiation Using Artificial Neural Networks(2023-08-05) SANTOS, L. S. A. DOS; ALLEGRO, P. R. P.; Marcilei Aparecida Guazzelli; GUIDI, A. L.; G. JUNIOR, P. R.; A. JUNIOR, V. S.; TOUFEN, D. L.; VILAS BOAS, A. C.© 2023, The Author(s) under exclusive licence to Sociedade Brasileira de Física.The ionizing radiation absorbed by semiconductor devices can change their properties by modifying their electrical parameters and, in the case of memories, it can modify the information contained in these components. Thus, the ability to predict how ionizing radiation affects electronic circuits becomes especially important in environments where there is the possibility of prolonged exposure to intense radiation, such as satellites, nuclear reactors, particle accelerators, and medical equipment, among others. In this sense, this paper proposes a methodology to reproduce the behavior of TID (total ionizing dose) damaged MOSFET transistors using the fully connected artificial neural networks, taking advantage of its universal estimator characteristics to oversample the dataset’s pattern and give it a better resolution. The dataset complexity requires a specific architecture choice, being necessary the use of two neural network models to separately reproduce the MOSFET electric current magnitude order and its curve shape. Results show a very good capability to reproduce and interpolate the MOSFET behavior, which makes the proposed method a promising way to simulate circuits based on MOSFETs that are exposed to ionizing radiation.
- Description and characterization of a ECR plasma device developed for thin film deposition(2003-03-05) DA MATTA, J. A. S.; GALVAO, R. M. O.; RUCHKO, L.; FANTINI, M. C. A.; KIUOHARA, P. K.The design, construction, and characterization of an electron-cyclotron-resonance (ECR) plasma device and its utilization for growing AlN polycrystals are described in detail. The plasma density and electron temperature were measured by two types of Langmuir probes under different conditions of magnetic configuration and RF substrate polarization. For the investigated nitrogen plasmas, the electron temperature increases towards substrate holder and decreases with pressure. The magnetic configuration and plasma parameters required for successful growth of polycrystal aluminum nitride have been determined.
- Coupling Modifies the Quantum Fluctuations of Entangled Oscillators(2021-06-05) Roberto Santos; LISBOA, V. S. F.© 2021, Sociedade Brasileira de Física.Coupled oscillators are among the simplest composite quantum systems in which the interplay of entanglement and interaction may be explored. We examine the effects of coupling on the quantum fluctuations of the coordinates and momenta of the oscillators in a single-excitation entangled Bell-like state. We discover that coupling acts as a mechanism for noise transfer between one pair of coordinate and momentum and another. Through this noise transfer mechanism, the uncertainty product is lowered, on average, relatively to its non-coupled level for one pair of coordinate and momentum and it is enhanced for the other pair. This novel mechanism for noise transfer may be explored in precision measurements in entanglement-assisted sensing and metrology.