Departamento de Física
URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/785
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2 resultados
Resultados da Pesquisa
- COTS Tolerant to Total Ionizing Dose (TID): AlGaN/GaNbased transistor 10 KeV X-ray Analysis(2022-11-09) BOAS, A. C.V.; ALBERTON, S. G.; DE MELO, M. A. A.; Roberto Santos; Renato Giacomini; MEDINA, N. H.; SEIXAS, L. E.; FINCO, S.; PALOMO, F. R.; Marcilei Aparecida Guazzelli© 2022 Institute of Physics Publishing. All rights reserved.Gallium nitride commercial transistors (GaN FET) are great candidates as power devices tolerant to the effects of Total ionizing dose (TID). Therefore, we have evaluated its robustness by analysing parameters in its characteristic parameters. Devices were exposed to a 10 keV X-ray source accumulating a total of 350 krad(Si). However, results indicate that the tested components are more tolerant to the effects of TID when in on-state mode rather than the off-mode, that is, when the device is working, which is good news for COTS applications in environments subject to the effects of ionizing radiation.
- A proposal to study long-lived isotopes produced by thermal neutron irradiation of digital devices(2019-08-05) ZAHN, G. S.; GENEZINI, F. A; MORALLES, M.; SIQUEIRA, P. T. D.; MEDINA, N. H.; AGUIAR, V. A. P.; MACCHIONE, E. L. A.; ADDED, N.; Marcilei Aparecida Guazzelli© Published under licence by IOP Publishing Ltd.In this work, we present a facility to study errors in digital devices exposed to thermal neutrons from a beam hole in the IEA-R1 nuclear reactor, as well as the long-lived isotopes produced in the irradiation of digital electronic devices under a slow neutron field. Preliminary results obtained with the analysis of a 28nm SRAM-based Xilinx Zynq-7000 FPGA are presented.