Improved current mirror performance using graded-channel silicon-on-insulator devices in high temperature operation

Página do item simplificado
dc.contributor.advisorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.contributor.authorFERREIRA, R. S.
dc.contributor.authorMarcelo Antonio Pavanello
dc.date.accessioned2023-08-26T23:50:52Z
dc.date.available2023-08-26T23:50:52Z
dc.date.issued2004-09-11
dc.description.abstractThis work studies the output characteristics of analog current mirror using graded-channel in comparison to conventional Silicon-On-Insulator MOSFETs in high temperature operation. The output characteristics are discussed, based on simulation and experimental results. The Mirroring Precision, Output Swing and Output Resistance are extremely improved at high temperature thanks to the reduced output conductance in graded-channel transistors.
dc.description.firstpage45
dc.description.lastpage50
dc.description.volume3
dc.identifier.citationFERREIRA, R. S.; PAVANELLO, M. A. Improved current mirror performance using graded-channel silicon-on-insulator devices in high temperature operation. Proceedings - Electrochemical Society, v. 3, p. 45-50, sept. 2004.
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/5063
dc.relation.ispartofProceedings - Electrochemical Society
dc.rightsAcesso Restrito
dc.titleImproved current mirror performance using graded-channel silicon-on-insulator devices in high temperature operation
dc.typeArtigo de evento
fei.scopus.citations5
fei.scopus.eid2-s2.0-17044424191
fei.scopus.subjectAnalog current mirrors
fei.scopus.subjectAsymmetric doping profile
fei.scopus.subjectAsymmetric doping region
fei.scopus.subjectInherent parasitic bipolar effects
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=17044424191&origin=inward
Arquivos
Coleções
Artigo de evento