Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMoSFETs
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2005-09-07
Autores
Milene Galeti
MARTINO, J. A.
SIMOEN, E.
CLAEYS, C.
MARTINO, J. A.
SIMOEN, E.
CLAEYS, C.
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Proceedings - Electrochemical Society
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GALETI, M.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C. Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMoSFETs. Proceedings - Electrochemical Society, p. 538-547, sept. 2005.
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This paper presents an analysis of the gate oxide thickness and temperature influence on the carrier generation lifetime determination. The study is accomplished through two-dimensional numerical simulations in partially depleted SOI nMOSFETs and compared with experimental data of devices fabricated with a 0.13 μm SOI CMOS technology. The temperature varied from 20°C to 80°C and the gate oxide thickness between 1.5 nm and 3.5 nm. Beyond the generation lifetime, other electric parameters were also analyzed as the threshold voltage, the surface potential, the activation energy and the gate current. A reduction of surface potential was observed for an increase in the gate oxide thickness, specially in the steady state surface potential. In the present study, the decrease in gate oxide thickness caused a maximum of 2% variation in the activation energy. For the step bias used, the gate current is not enough large to control the body charging and makes it less sensitive to transient effects.