A study of total series resistance and effective channel length comparing SOI nMOSFET and GC SOI nMOSFET in saturation region

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dc.contributor.authorALMEIDA, G. F. DE
dc.contributor.authorMARTINO, J. A.
dc.date.accessioned2023-08-26T23:50:40Z
dc.date.available2023-08-26T23:50:40Z
dc.date.issued2005-09-07
dc.description.abstractThis work presents a study of total series resistance (Rs) and effective channel length (Leff) comparing conventional SOI and GC SOI nMOSFETs in saturation region. The GC and conventional SOI devices have different behaviors due to the structural differences. The lower doped region of the GC devices has fundamental influence in RS and Leff extraction, i.e., it suggests that its intrinsic resistance value is added to the series resistance parameter and not to the channel one. Such behavior also influences the extraction of Leff, as the applied method shows.
dc.description.firstpage492
dc.description.lastpage501
dc.description.volumePV 2005-08
dc.identifier.citationALMEIDA, G. F. DE; MARTINO, J. A. A study of total series resistance and effective channel length comparing SOI nMOSFET and GC SOI nMOSFET in saturation region. Proceedings - Electrochemical Society, v. PV 2005-08, p. 492-501, sept. 2005.
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/5050
dc.relation.ispartofProceedings - Electrochemical Society
dc.rightsAcesso Restrito
dc.titleA study of total series resistance and effective channel length comparing SOI nMOSFET and GC SOI nMOSFET in saturation region
dc.typeArtigo de evento
fei.scopus.citations0
fei.scopus.eid2-s2.0-31744443410
fei.scopus.subjectSaturation region
fei.scopus.subjectTotal series resistance
fei.scopus.updated2024-11-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=31744443410&origin=inward
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