Analysis of deep submicrometer bulk and fully depleted SOI nmosfet analog operation at cryogenic temperatures

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dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorJoao Antonio Martino
dc.contributor.authorSIMOEN, E.
dc.contributor.authorCLAEYS, C.
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-8121-6513
dc.date.accessioned2023-08-26T23:50:35Z
dc.date.available2023-08-26T23:50:35Z
dc.date.issued2005-05-20
dc.description.abstractThe increased demand for mixed mode digital-analog circuits is playing an important role nowadays. As the temperature of operation is decreased well-known improvements in the digital characteristics as reduction of the subthreshold slope and increased carrier mobility are obtained leading to better performance characteristics without scaling the dimensions. In this work, the impact of the temperature reduction on the analog characteristics of deep submicrometer bulk and fully depleted SOI nMOSFETs is compared. It is shown that the Early voltage does not vary appreciably with temperature and the intrinsic gain is substantially improved in bulk deep submicrometer transistors. On the other hand, deep submicrometer fully depleted SOI can operate at reduced bias current to bias the same load in base-band applications.
dc.description.firstpage289
dc.description.lastpage294
dc.description.volumePV 2005-03
dc.identifier.citationPAVANELLO, M. A.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C. Analysis of deep submicrometer bulk and fully depleted SOI nmosfet analog operation at cryogenic temperatures. Proceedings - Electrochemical Society, v. PV 2005-03, p. 289-294, mayo, 2005.
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/5045
dc.relation.ispartofProceedings - Electrochemical Society
dc.rightsAcesso Restrito
dc.titleAnalysis of deep submicrometer bulk and fully depleted SOI nmosfet analog operation at cryogenic temperatures
dc.typeArtigo de evento
fei.scopus.citations2
fei.scopus.eid2-s2.0-31844453128
fei.scopus.subjectBase band applications
fei.scopus.subjectBias currents
fei.scopus.subjectSubthreshold slope
fei.scopus.updated2024-12-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=31844453128&origin=inward
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