Simple method to determine the poly gate doping concentration based on poly depletion effect

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dc.contributor.authorRODRIGUES, M.
dc.contributor.authorSONNENBERG, V.
dc.contributor.authorMARTINO, J. A.
dc.date.accessioned2023-08-26T23:50:43Z
dc.date.available2023-08-26T23:50:43Z
dc.date.issued2005-09-07
dc.description.abstractThis work presents an analysis of the Capacitance vs. Voltage curve in MOS Capacitor taking into account the poly gate depletion effect in deep submicrometer CMOS technology. This effect is observed in capacitors with poly gate material with low doping concentration near of poly gate/oxide interface. By bidimensional numerical simulations, C-V curves were performed for this analysis and a simple method to determine the poly gate doping concentration is proposed. Experimental results are also presented obtaining coherent values.
dc.description.firstpage180
dc.description.lastpage187
dc.description.volumePV 2005-08
dc.identifier.citationRODRIGUES, M.; SONNENBERG, V.; MARTINO, J. A. Simple method to determine the poly gate doping concentration based on poly depletion effect. Proceedings - Electrochemical Society, v. PV 2005-08, p. 180-187, sept. 2005.
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/5053
dc.relation.ispartofProceedings - Electrochemical Society
dc.rightsAcesso Restrito
dc.titleSimple method to determine the poly gate doping concentration based on poly depletion effect
dc.typeArtigo de evento
fei.scopus.citations0
fei.scopus.eid2-s2.0-31744439794
fei.scopus.subjectDoping concentration
fei.scopus.subjectOxide interfaces
fei.scopus.subjectPoly depletion
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=31744439794&origin=inward
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