Channel length reduction influence on harmonic distortion of graded-channel gate-all-around devices
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2006-09-01
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Rodrigo Doria
Marcelo Antonio Pavanello
CERDEIRA, A.
RASKIN, J. P.
FLANDRE, D.
Marcelo Antonio Pavanello
CERDEIRA, A.
RASKIN, J. P.
FLANDRE, D.
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ECS Transactions
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DORIA, E.; PAVANELLO, M. A.; CERDEIRA, A.; RASKIN, J. P.; FLANDRE, D. Channel length reduction influence on harmonic distortion of graded-channel gate-all-around devices. ECS Transactions, v. 4, n. 1, p. 247-256, sept. 2006.
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This work compares the linearity of conventional and Graded-Channel (GC) Gate-All-Around (GAA) devices for analog operation as in an amplifier when the channel length is scaled. The study has been performed through two-dimensional process and device simulations. Total harmonic distortion (THD) and third order harmonic distortion (HD3) have been evaluated. When taking into account similar bias the performance of GC GAA transistors remains better than the uniformly doped GAA for any channel length. Although scaling the devices tends to degrade the harmonic distortion, significant results were obtained for the GC configuration measured as an improvement of more than 15 dB in total harmonic distortion-to-gain ratio operating in the same region with channel length of 1uμm and with lightly doped region length of 0.3 μm. © 2006 The Electrochemical Society.