Engenharia Elétrica

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https://repositorio.fei.edu.br/handle/FEI/21

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Navegando Engenharia Elétrica por Autor "AFZALIAN, A."

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    Study of total quantum efficiency of lateral SOI PIN photodiodes with back-gate bias, intrinsic length and temperature variation
    (2015) NOVO, C. D.; BAPTISTA, J.; Marcilei Aparecida Guazzelli; Renato Giacomini; AFZALIAN, A.; FLANDRE, D.
    © The Electrochemical Society.This paper addresses, for the first time, an analysis of the total quantum efficiency of lateral SOI PIN photodiodes with different intrinsic lengths in the 300 to 500 K range simultaneously considering back-gate bias and temperature influences. Experimental results showed that the mode of operation changes the behavior of the devices concerning dark and photocurrents, while the temperature variation produces different trades in quantum efficiency related to the absorption length and the diffusion length variation.
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    Artigo de evento
    Temperature and back-gate bias influence on the operation of lateral SOI PIN photodiodes
    (2014-09-05) NOVO, C.; GIACOMINI, R. DORIA, R.; AFZALIAN, A.; FLANDRE. D.Temperature and back-gate bias influence on the operation of lateral SOI PIN photodiodes. 2014 29th Symposium on Microelectronics Technology and Devices: Chip in Aracaju, SBMicro 2014,; Renato Giacomini; Rodrigo Doria; AFZALIAN, A.; FLANDRE. D.
    © 2014 IEEE.This paper presents a study of back-gate bias and temperature influence on the operation of lateral SOI PIN photodiodes. Experimental results showed that the operation mode of the photodiodes is affected by back-gate bias, modifying the photogenerated current, which has a strong influence on the illuminated to dark ratio, as well as, on the quantum efficiency. At lower temperatures, the results showed that the quantum efficiency can be improved by biasing the device in inversion mode, while at higher temperatures, the accumulation mode showed a higher illuminated to dark ratio.