Study of total quantum efficiency of lateral SOI PIN photodiodes with back-gate bias, intrinsic length and temperature variation
N/D
Tipo de produção
Artigo de evento
Data de publicação
2015
Texto completo (DOI)
Periódico
ECS Transactions
Editor
Texto completo na Scopus
Citações na Scopus
2
Autores
NOVO, C. D.
BAPTISTA, J.
Marcilei Aparecida Guazzelli
Renato Giacomini
AFZALIAN, A.
FLANDRE, D.
Orientadores
Resumo
© The Electrochemical Society.This paper addresses, for the first time, an analysis of the total quantum efficiency of lateral SOI PIN photodiodes with different intrinsic lengths in the 300 to 500 K range simultaneously considering back-gate bias and temperature influences. Experimental results showed that the mode of operation changes the behavior of the devices concerning dark and photocurrents, while the temperature variation produces different trades in quantum efficiency related to the absorption length and the diffusion length variation.
Citação
NOVO, C. D.; BAPTISTA, J.; GUAZZELLI, M.A.; GIACOMINI, R.; AFZALIAN, A.; FLANDRE, D. Study of total quantum efficiency of lateral SOI PIN photodiodes with back-gate bias, intrinsic length and temperature variation. ECS Transactions, v. 66, n. 5, p. 101-107, 2015.
Palavras-chave
Keywords
Assuntos Scopus
Absorption length; Back-gate bias; Diffusion length; Mode of operations; Pin photodiode; Temperature influence; Temperature variation