Departamento de Física

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https://repositorio.fei.edu.br/handle/FEI/785

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Navegando Departamento de Física por Autor "Agopian P.G.D."

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    Artigo
    Analog performance of standard and uniaxial strained triple-gate SOI FinFETs under x-ray radiation
    (2014) Bordallo C.C.M.; Teixeira F.F.; Silveira M.A.G.; Martino J.A.; Agopian P.G.D.; Simoen E.; Claeys C.
    © 2014 IOP Publishing Ltd.The influence of x-ray irradiation on the main digital and analog parameters of triple gate silicon-on- insulator FinFETs is investigated for unstrained and uniaxially strained devices. Comparing the p- and n-MuGFET response to radiation, x-rays can be more harmful for nMuGFETs than for the p-type counterparts due to the back-interface leakage current, which is generated by the positive charges trapped in the buried oxide. However, in pMuGFETs, the radiation tends to suppress the parasitic back-conduction, resulting in an improvement of the device performance.
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    Artigo de evento
    Comparative experimental study between tensile and compressive uniaxially stressed nmugfets under x-ray radiation focusing on analog behavior
    (2013) Peruzzi V.V.; Gimenez S.P.; Agopian P.G.D.; Silveira M.A.G.; Martino J.A.; Simoen E.; Claeys C.
    This paper describes a detailed experimental comparative study between nMuGFETs implemented with tensile and compressive stresses when submitted to X-ray radiation, taking into account different doses and different channel widths and lengths of the devices. The experimental results show that the intrinsic voltage gain and the unit voltage gain frequency for tensile stressed devices always present a higher immunity to the X-ray radiation (up to 50 Mrad). © The Electrochemical Society.