Engenharia Química

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https://repositorio.fei.edu.br/handle/FEI/25

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Navegando Engenharia Química por Autor "ADDED, N."

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    Neutron radiation effects on an electronic system on module
    (2020-08-13) LO PRESTI, D.; MEDINA, N. H.; MORALLES, M. M.; AGUIAR, V. AP; OLIVEIRA, J. R. B.; ADDED, N.; MACCHIONE, E. L. A.; SIQUEIRA, P. DE T. D.; ZAHN, G. Z.; GENEZINI, F.; BONANNO, D.; GALLO, G.; RUSSO, S.; SGOUROS, O.; MUOIO, A.; PANDOLA, L.; CAPPUZZELLO, F.
    The NUMEN (NUclear Matrix Elements for Neutrinoless double beta decay) project was recently proposed with the aim to investigate the nuclear response to Double Charge Exchange reactions for all the isotopes explored by present and future studies of 0νββ decay. The expected level of radiation in the NUMEN experiment imposes severe limitations on the average lifetime of the electronic devices. During the experiments, it is expected that the electronic devices will be exposed to about 105 neutrons/cm2/s according to FLUKA simulations. This paper investigates the reliability of a System On Module (SOM) under neutron radiation. The tests were performed using thermal, epithermal, and fast neutrons produced by the Instituto de Pesquisas Energéticas e Nucleares 4.5 MW Nuclear Research Reactor. The results show that the National Instruments SOM is robust to neutron radiation for the proposed applications in the NUMEN project.
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    Artigo
    Thermal neutron induced upsets in 28nm SRAM
    (2019-01-01) AGUIAR, V. A. P.; MEDINA, N. H.; ADDED, N.; MACCHIONE, E. L. A.; ALBERTON, S. G.; RODRIGUES, C. L.; SILVA, T. F.; ZAHN, G. S.; GENEZINI, F. A.; MORALLES, M.; BENEVENUTI, F.; GUAZZELLI, Marcilei Aparecida
    In this work, we present the first results of static tests in a 28nm SRAM under thermal neutron irradiation from the IPEN/IEA-R1 research reactor. The SRAM used was the configuration memory of a Xilinx Zynq-7000 FPGA and the ECC frame was used to detect bit-flips. It was obtained a SEU cross-section of 9.2(21) × 10−16 cm2/bit, corresponding to a FIT/Mb of 12(5), in accordance with expected results. The most probable cause of SEU in this device are 10B contamination on tungsten contacts.