Engenharia Elétrica

URI Permanente desta comunidade

Agora exibindo 1 - 1 de 1

Analysis of bulk and accumulation mobilities in n- and p-type triple gate junctionless nanowire transistors
(2017-07-28) RIBEIRO, T. A.; Marcelo Antonio Pavanello; CERDEIRA, A.
This paper studies the effective mobility in n- and p-type junctionless nanowire transistors (JNT) with variable fin width from quasi-planar to nanowire devices. JNTs electrical parameters were analyzed and the results show that smaller fin width have higher mobility while the mobility decreases for quasi-planar devices. Simulations were used to analyze the mobility showing that small fin devices reach higher mobility for smaller gate bias variation above the threshold voltage and a higher mobility in the middle of the channel due to the better electrostatic coupling compared to larger devices.