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Artigo de evento The NUMEN project @ LNS: Status and perspectives(2019-09-03) CAPPUZZELLO, F.; AGODI, C.; ACOSTA, L.; ALTANA, C.; AMADOR-VALENZUELA, P.; AUERBACH, N.; BAREA, J.; BELLONE, J.; BIJKER, R.; BONANNO, D.; BORELLO-LEWIN, T.; BOZTOSUN, I.; BRANCHINA, V.; BRASOLIN, S.; BRISCHETTO, G.; BRUNASSO, O.; BURRELLO, S.; CALABRESE, S.; CALABRETTA, L.; CALVO, D.; CAPIROSSI, V.; CARBONE, D.; CAVALLARO, M.; GARCIA,L. E. C.; LOMELI, E. R. C.; CHEN, R.; CIRALDO, I.; COLONNA, M.; D'AGOSTINO, G.; DELAUNAY, F.; DESHMUKH, N.; DJAPO, H.; DE GERONIMO, G.; DE LOS RIOS, K.; FERRARESI, C.; FERREIRA, J. L.; FERRETTI, J.; FINOCCHIARO, P.; FIRAT, S.; FISICHELLA, M.; FOTI, A.; GALLO, G.; GARCIA-TECOCOATZI, H.; HACISALIHOGLU, A.; HUERTA-HERNANDEZ, A.; KOTILA, Z. J.; KUCUK, Y.; IAZZI, F.; LANZALONE, G.; LAY, J. A.; LA FAUCI, L.; LA VIA, F.; LENSKE, H.; LINARES, R.; LO PRESTI, D.; LUBIAN, J.; MA. J.; MARIN-LAMBARRI, D.; RUIZ, J. M.; MEDINA, N. H.; MENDES, D. R.; MEREU, P.; MORALLES, M.; NERI, L.; OLIVEIRA, J. R. B.; PAKOU, A.; PANDOLA, L.; PETRASCU, H.; PIETRALLA, N.; PINNA, F.; REITO, S.; RIES, P.; RODRIGUES, M. R. D.; RUSSO, A. D.; RUSSO, G.; SANTOPINTO, E.; Roberto Santos; SERBINA, L.; SGOUROS, O.; Marcilei Aparecida Guazzelli; SOLAKCL, S. O.; SOULIOTIS, G.; SOUKERAS, V.; SPATAFORA, A.; TORRESI, D.; TUDISCO, S.; HERNANDEZ, H. V.; VSEVOLODOVNA, R. I. M.; WANG, J. S.; WERNER, V.; YANG, Y. Y.; YILDIRIN, A.; ZAGATTO, V. A. B.© 2019 Author(s).The NUMEN project aims at accessing experimentally driven information on Nuclear Matrix Elements (NME) involved in the half-life of the neutrinoless double beta decay (0νββ), by high-accuracy measurements of Heavy Ion (HI) induced Double Charge Exchange (DCE) reaction cross sections. In particular, the (18O,18Ne) and (20Ne,20O) reactions are used as tools for β+β+ and β-β- decays, respectively. In the experiments, performed at INFN - Laboratory Nazionali del Sud (LNS) in Catania, the beams are accelerated by the Superconducting Cyclotron (CS) and the reaction ejectiles are detected the MAGNEX magnetic spectrometer. The measured cross sections are challengingly low (a few nb), being the total reaction cross section much larger (a few b), thus a high sensitivity and a large rejection capability are demanded to the experimental set-up. This limits the present exploration to few selected isotopes of interest in the context of typically low-yield experimental runs. A major upgrade of the LNS facility is foreseen in order to increase the experimental yield of at least two orders of magnitude, still keeping the high sensitivity of the present set-up, making it feasible a systematic study of all the cases of interest. Frontiers technologies are going to be developed, to this purpose, for the accelerator and the detection systems. In parallel, advanced theoretical models are being developed in order to extract the nuclear structure information from the measured cross sections.Artigo de evento Radiation effect mechanisms in electronic devices(2013-12-01) Marcilei Aparecida Guazzelli; Roberto Santos; LEITE, F.; CUNHA, F.; CIRNE, K. H.; MEDINA, N. H.; ADDED, N.; AGUIAR, V. A. P.© Copyright owned by the author(s) under the terms of the Creative Commons Attribution-NonCommercial-ShareAlike Licence.In this work, P- and N-MOSFETs (Metal Oxide Semiconductor Field Effect Transistor) were submitted to X-ray and ion beams. CD 4007, a commercial off-the-shelf integrated circuit composed of six transistors, three P-type and three N-type, in a single package, was used. The integrated circuits were exposed to 60 MeV 35Cl ion beams using the São Paulo 8UD Pelletron Accelerator and 10 keV X-ray radiation, using a Shimadzu XRD-7000 X-ray diffractometer. The total dose effects due to ionizing radiation in MOSFET were analyzed. The results indicate Vth depends on the absorbed dose and dose rate. The deviation of Vth is higher for P-MOS, while the change in slope is higher for N-MOS. TID (Total Ionizing Dose) caused by heavy ion does not seem to affect mobility. After heat treatment, the device establishes a different equilibrium state compared to that achieved at room temperature. The heat treatment worsens the P-type characteristics and improves the N-type.