Artigos
URI permanente para esta coleçãohttps://repositorio.fei.edu.br/handle/FEI/798
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Resultados da Pesquisa
- Analytical Model for Low-Frequency Noise in Junctionless Nanowire Transistors(2020-24-24) TREVISOLI, RENAN; Marcelo Antonio Pavanello; CAPOVILLA, CARLOS EDUARDO; BARRAUD, SYLVAIN; DORIA, RODRIGO TREVISOLIThis article aims at proposing a compact analytical model for the low-frequency noise (LFN) of junctionless nanowire transistors (JNTs), operating at different bias conditions and temperatures. The model is validated through tridimensional numerical simulations, accounting for different trap configurations, as well as devices with different channel lengths, nanowire widths, and doping concentrations. Experimental results of short-channel junctionless transistors have also been used to demonstrate the model's applicability and accuracy.
- Analytical model for the dynamic behavior of triple-gate junctionless nanowire transistors(2016) Trevisoli R.; Doria R.T.; De Souza M.; Barraud S.; Vinet M.; Pavanello M.A.© 2015 IEEE.This paper presents an analytical model for the intrinsic capacitances and transconductances of triple-gate junctionless nanowire transistors. The model is based on a surface-potential drain current model, which includes shortchannel effects, and accounts for the dependences on the device dimensions, doping concentration, and quantum effects. It is validated with 3-D Technology Computer-Aided Design (TCAD) simulations for several device characteristics and biases as well as with the experimental results.