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    SOI MOSFET Transconductance Behavior from Micro to Nano Era
    (2011-01-05) MARTINO, J. A.; AGOPIAN, P. G. D.; SIMOEN, E.; CLAEYS, C.
    © 2011, Springer-Verlag Berlin Heidelberg.The transconductance is one of the main device parameters used to analyze the electrical characteristics of the MOSFET. From the transconductance versus gate voltage characteristic it is possible to extract many electrical and technological parameters like threshold voltage, carrier mobility, electric field mobility degradation and others. However, partially and fully depleted SOI (planar and multi-gate) devices present second order effects that have to be well understood in order to avoid any mistake of the parameter extraction. This chapter is devoted to show the main second order effects that modify the transconductance behavior from micro to nano era of SOI devices like: partially-depleted, fully depleted, planar and multi-gate, standard and strained, DTMOS and GC SOI MOSFETs. The impact of the gate stack composition such as cap layer and metal gate thickness is also outlined. For example multiple gm peaks are sometimes observed and can be related with different origins like gate induced floating body effects, multiple threshold voltages, quantum effects and others.
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    Modeling and Characterization of Residual Stresses in Material Processing
    (2014) Gustavo Donato; Rodrigo Magnabosco
    Residual stresses can seriously alter (detrimentally or favorably) the mechanical behavior of materials and a component's fatigue life and crack growth behavior. They can arise from different sources and can be simulated and experimentally quantified using several different techniques. As a step in the direction of better understanding residual stresses and the different methods for its prediction, simulation, and quantification, this work reviews the different types of stresses, their physical basis, their sources, and critically presents the current most relevant approaches and limitations for residual stress modeling and experimental quantification. At the end, a brief exploratory comparison between experimental results from X-ray diffraction and hole-drilling methods using finite element (FE) models as benchmarks is conducted. Results reveal the limitations of those methods, mainly regarding plasticity effects. © 2014 Elsevier Ltd All rights reserved.