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URI permanente para esta coleçãohttps://repositorio.fei.edu.br/handle/FEI/5120
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Artigo de evento 0 Citação(ões) na Scopus Series resistance influence on the linear kink effect in twin-gate partially depleted SOI nMOSFETs(2007-09-01) DER AGOPIAN, P. G.; Joao Antonio Martino; SIMOEN, E.; CLAEYS, C.This work elaborates on the influence of the series resistance on the linear kink effect (LKE) in twin-gate partially depleted (PD) Silicon-on-Insulator (SOI) nMOSFETs. The study is based on two-dimensional numerical simulations and is validated by experimental results. A relationship between the total resistance and the apparent mobility degradation factor is reported, showing that the twin-gate structure and a conventional SOI transistor with an external resistance both present a similar LKE reduction, The asymmetric behavior of the body potential with the interchange of the master and slave transistor of the twin-gate structure will be also shown. © 2006 The Electrochemical Society.