Engenharia Elétrica
URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/21
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- Analysis of bulk and accumulation mobilities in n- and p-type triple gate junctionless nanowire transistors(2017-07-28) RIBEIRO, T. A.; Marcelo Antonio Pavanello; CERDEIRA, A.This paper studies the effective mobility in n- and p-type junctionless nanowire transistors (JNT) with variable fin width from quasi-planar to nanowire devices. JNTs electrical parameters were analyzed and the results show that smaller fin width have higher mobility while the mobility decreases for quasi-planar devices. Simulations were used to analyze the mobility showing that small fin devices reach higher mobility for smaller gate bias variation above the threshold voltage and a higher mobility in the middle of the channel due to the better electrostatic coupling compared to larger devices.