Repositório do Conhecimento Institucional do Centro Universitário FEI
 

Engenharia Elétrica

URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/21

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20211

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Autor: search.filters.author.ALVES, C.R.Periódico: search.filters.ispartof.SBMicro 2021 - 35th Symposium on Microelectronics Technology and Devices

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    Artigo de evento 1 Citação(ões) na Scopus
    Analysis of Capacitances in Asymmetric SelfCascode SOI nMOSFETs
    (2021-08-27) ALVES, C.R.; D' OLIVEIRA, L. M.; Michelly De Souza
    ©2021 IEEE.This work presents a study of the capacitance of asymmetric self-cascode silicon-on-insulator (ASC SOI) MOSFETs with similar gate areas and different gate lengths. Experimental results of total gate capacitance of different ASC are presented and complemented with the results of twodimensional simulations. The transcapacitances are explored through two-dimensional simulations. Results show that different channel lengths of the composite transistors have more influence in the depletion region of the capacitance curves for low VDS. The gate-source and gate-drain capacitances show opposite trends with the change in the lengths of source and drain transistors, despite of the VDS applied.