Repositório do Conhecimento Institucional do Centro Universitário FEI
 

Engenharia Elétrica

URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/21

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20181

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Autor: search.filters.author.DORIA, R. T.Assunto: search.filters.subject.Compact model

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    Artigo de evento 0 Citação(ões) na Scopus
    Adaption of triple gate junctionless MOSFETs analytical compact model for accurate circuit design in a wide temperature range
    (2018-03-19) CERDEIRA, A.; AVILA-HERRERA, F.; ESTRADA, M.; DORIA, R. T.; Marcelo Antonio Pavanello
    This paper presents the necessary adaptions on the proposed compact analytical model of triple gate junctionless nanowire transistors for accurate description of device electrical characteristics in a wide temperature range. The model validation is performed by comparison against experimental results showing very good agreement, with continuous current and its derivatives in all regions of operation and temperatures.