Adaption of triple gate junctionless MOSFETs analytical compact model for accurate circuit design in a wide temperature range
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2018-03-19
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CERDEIRA, A.
AVILA-HERRERA, F.
ESTRADA, M.
DORIA, R. T.
Marcelo Antonio Pavanello
AVILA-HERRERA, F.
ESTRADA, M.
DORIA, R. T.
Marcelo Antonio Pavanello
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2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018
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CERDEIRA, A.; AVILA-HERRERA, F.; ESTRADA, M.; DORIA, R. T.; PAVANELLO, M. A. Adaption of triple gate junctionless MOSFETs analytical compact model for accurate circuit design in a wide temperature range. 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018, p. 1-4, 2018
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This paper presents the necessary adaptions on the proposed compact analytical model of triple gate junctionless nanowire transistors for accurate description of device electrical characteristics in a wide temperature range. The model validation is performed by comparison against experimental results showing very good agreement, with continuous current and its derivatives in all regions of operation and temperatures.