Engenharia Elétrica
URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/21
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2 resultados
Resultados da Pesquisa
- Analysis of the Gate-Induced Drain Leakage of SOI Nanowire and Nanosheet MOS Transistors at High Temperatures(2022-07-04) Michelly De Souza; CERDEIRA, A.; ESTRADA, M.; BARRAUD, S.; CASSE, M.; VINET, M.; FAYNOT, O.; Marcelo Antonio Pavanello© 2022 IEEE.This work presents a comparison between the Gate-Induced Drain Leakage (GIDL) current of the nanowire (tri-gate MOSFET with narrow fin width) and nanosheet (tri-gate MOSFET with wide fin width) SOI MOSFETs at high temperatures, in the range between 300 K and 580 K. The study is conducted using experimental data, corroborated with 3D TCAD simulations. It is demonstrated that the GIDL current normalized by the total fin width is larger in nanosheet MOSFET than for the nanowire at high temperatures. Additionally, the nanosheet device presents a larger variation of the normalized GIDL current with the temperature than the nanowire one.
- Extraction of the Back Channel Mobility in SOI Nanowire MOS Transistors under Substrate Biasing(2022-07-04) BERGAMASHI, F. E.; WIRTH, G. I.; BARRAUD, S.; CASSE, M.; VINET, M.; FAYNOT, O.; Marcelo Antonio Pavanello© 2022 IEEE.In this work, an analysis of the effective mobility of SOI nanowire MOS transistors is performed by separating the mobility of electrons in the back channel, which is created when substrate bias is applied. Measurements are done in n-type devices with an Ω-gate structure and variable channel length. Both longer and shorter channel devices present higher mobility in the back channel, but strong mobility reduction is observed with the increase of the substrate bias, reaching values close to that of the front channel at strong back bias levels. This effect is independent of the applied gate voltage overdrive. Three-dimensional TCAD simulation validates the method used to separate the back channel mobility, showing that the front channel mobility is not changed by the increase in substrate bias.