(2021-01-05) VILAS BOAS, ALEXIS C.; MELO, MARCO ANTONIO ASSIS DE; Roberto Santos; Renato Giacomini; MEDINA N. H.; SEIXA, L. E.; FINCO, S.; PALOMO, F. R.; ROMERO-MAESTRE, A.; Marcilei Aparecida Guazzelli
The COTS power transistors based in GaN were exposed to TID effects by 10-keV X-rays. These HEMTs were tested in the On- and Off-state bias conditions. Switching tests were performed before and after irradiation steps. The devices were characterized at temperatures ranging from.
