Ionizing radiation hardness tests of GaN HEMTs for harsh environments
Arquivos
Tipo de produção
Artigo
Data de publicação
2021-01-05
Texto completo (DOI)
Periódico
MICROELECTRONICS RELIABILITY
Editor
Texto completo na Scopus
Citações na Scopus
24
Autores
VILAS BOAS, ALEXIS C.
MELO, MARCO ANTONIO ASSIS DE
Roberto Santos
Renato Giacomini
MEDINA N. H.
SEIXA, L. E.
FINCO, S.
PALOMO, F. R.
ROMERO-MAESTRE, A.
Marcilei Aparecida Guazzelli
Orientadores
Resumo
The COTS power transistors based in GaN were exposed to TID effects by 10-keV X-rays. These HEMTs were tested in the On- and Off-state bias conditions. Switching tests were performed before and after irradiation steps. The devices were characterized at temperatures ranging from.
Citação
VILAS BOAS, A. C.; MELO, M. A. A. DE; SANTOS, R.B.B.; GIACOMINI, R.; MEDINA, N. H.; SEIXAS, L. E.; FINCO, S.; PALOMO, F. R.; ROMERO-MAESTRE, A.; GUAZZELLI, M. A. Ionizing radiation hardness tests of GaN HEMTs for harsh environments. MICROELECTRONICS RELIABILITY, v. 116, p. 114000, 2021.
Palavras-chave
TID; Radiation effects; GaN; HEMT