Engenharia Elétrica
URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/21
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3 resultados
Resultados da Pesquisa
- Estimating temperature dependence of generation lifetime extracted from drain current transients(2006-05-01) MARTINO, J. A.; Milene Galeti; RAFI, J. M.; MERCHA, A.; SIMOEN, E.; CLAEYS, C.This paper presents an analysis of the temperature influence on the generation lifetime determination using drain-current transients in floating body partially depleted silicon-insulator n-type metal-oxide-semiconductor field effect transistors fabricated in a 0.13-μm SOI complementary metal-oxide semiconductor technology. The device parameters used to calculate the generation lifetime are studied as a function of the temperature from 20 to 80°C. A sensitivity analysis is done as a function of the gate oxide thickness and silicon film concentration, and the influence on the generation lifetime determination is studied. A simple model to estimate the generation lifetime is proposed. The model is experimentally applied and a good agreement is obtained. All the work is supported by two-dimensional numerical simulation. © 2006 The Electrochemical Society. All rights reserved.
- Uniaxial and/or biaxial strain influence on MuGFET devices(2012-01-05) AGOPIAN, P. G. D.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C.In this work, the impact of global andor local strain engineering techniques on tri-gate p- and nMuGFETs performance is experimentally evaluated. Multiple gate structures were analyzed through basic and analog performance parameters for four different splits processed with different strain-engineering techniques (unstrained, uniaxial, biaxial and uniaxial+biaxial stress). While n-channel devices with narrow fins present a worse analog behavior, biaxial stress promotes the electron mobility for larger devices increasing the voltage gain. Besides the voltage gain, the transconductance, output conductance and Early Voltage are also evaluated. Although pMuGFETs are less affected by the strain engineering, they present better analog behavior for all studied devices. © 2012 The Electrochemical Society.
Artigo ESTIMATING TEMPERATURE DEPENDENCE OF GENERATION LIFETIME EXTRACTED FROM DRAIN CURRENT TRANSIENTS(2006) MARTINO, J. A.; GALETI, M.;Galeti, M;GALETI, MILENE; RAFI, J. M.; MERCHA, A.; SIMOEN, E.; CLAEYS, C.