Estimating temperature dependence of generation lifetime extracted from drain current transients

Abstract

This paper presents an analysis of the temperature influence on the generation lifetime determination using drain-current transients in floating body partially depleted silicon-insulator n-type metal-oxide-semiconductor field effect transistors fabricated in a 0.13-μm SOI complementary metal-oxide semiconductor technology. The device parameters used to calculate the generation lifetime are studied as a function of the temperature from 20 to 80°C. A sensitivity analysis is done as a function of the gate oxide thickness and silicon film concentration, and the influence on the generation lifetime determination is studied. A simple model to estimate the generation lifetime is proposed. The model is experimentally applied and a good agreement is obtained. All the work is supported by two-dimensional numerical simulation. © 2006 The Electrochemical Society. All rights reserved.