Engenharia Elétrica
URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/21
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2 resultados
Resultados da Pesquisa
- Analysis of Fin Width Influence on the Carrier's Mobility of Nanowire MOSFETs(2021-08-31) CCOTO, C. U. C.; BERGAMASHI, F. E.; Marcelo Antonio Pavanello©2021 IEEE.In this work, the study of the effective electron mobility (peff) of n-channel MOS transistor nanowires is presented. By extracting the mobility of the top and sidewall using the surface current separation technique together with the split-CV method. Analyzing the comparison of simulated TCAD results and experimental transistors fabricated with various fin widths (12nm-82nm) and how the effect of varying the fin width and applied substrate voltages interfere with carrier mobility values.
- Temperature Influence on the Electrical Properties of Vertically Stacked Nanowire MOSFETs(2021-08-27) RODRIGUES, J. C.; MARINELLO, G.; CASSE, M.; BARRAUD, S.; VINET, M.; FAYNOT, O.; Marcelo Antonio PavanelloThis paper aims at analyzing the electrical characteristics of 2-level Stacked Nanowire MOSFETs at low temperatures. Fundamental device parameters such as threshold voltage, subthreshold slope and transconductance are evaluated in the temperature range of 160K to 400K. The influence of fin width variation is also studied. An analytical model of multiple-gate nanowire MOSFETs is employed to explain the experimentally observed data. It is demonstrated that the threshold voltage increases linearly with the temperature reduction. Stacked nanowires with wider fin width presents larger threshold variation with temperature. c2021 IEEE.