Engenharia Elétrica
URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/21
Navegar
1 resultados
Resultados da Pesquisa
- Drain current model for junctionless nanowire transistors(2012-03-17) TREVISOLI, R. D.; Rodrido Doria; Michelly De Souza; Marcelo Antonio PavanelloJunctionless Nanowire Transistors (JNT) are considered as promising devices for sub-20 nm era due to the great scalability they provide. This work proposes a physically based analytical model for the drain current in JNTs. The proposed model is continuous from the subthreshold region to the saturation. The model is validated with 3D TCAD simulation and experimental results. © 2012 IEEE.