Repositório do Conhecimento Institucional do Centro Universitário FEI
 

Engenharia Elétrica

URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/21

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20121

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Periódico: search.filters.ispartof.2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012Assunto: search.filters.subject.Doping concentration

Resultados da Pesquisa

Agora exibindo 1 - 2 de 2
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    Artigo de evento 13 Citação(ões) na Scopus
    Analysis of gate capacitance of n-type junctionless transistors using three-dimensional device simulations
    (2012-03/17) MARINIELLO, G.; Rodrido Doria; Michelly De Souza; Marcelo Antonio Pavanello; TREVISOLI, R. D. G.
    Junctionless transistors can be an excellent alternative for extremely scaled MOSFETs as they present a good behavior with no doping gradients between channel and source/drain regions. This paper aims at analyzing the gate capacitance (C gg) of junctionless transistors dependence with the three most important technological parameters for these devices: doping concentration (N D), fin width (W fin) and fin height (H fin). © 2012 IEEE.
  • N/D
    Artigo de evento 3 Citação(ões) na Scopus
    An analytical estimation model for the spreading resistance of Double-Gate FinFETs
    (2012-03-17) MALHEIRO, C. T.; PEREIRA, A. S. N.; Renato Giacomini
    The FinFET spreading resistance is the component of the parasitic resistance of FinFETs caused by the curved shape of the current lines in drain and source regions, close to the junctions. This work proposes a very simple analytical model for the spreading resistance of Double-Gate FinFETs that is valid for any fin width from 16nm, without fitting parameters. The model output was compared to data extracted from numeric simulation and it showed accuracy better than 8% for the considered range of devices with three different doping concentrations. © 2012 IEEE.