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Engenharia Elétrica

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Periódico: search.filters.ispartof.2022 IEEE Latin America Electron Devices Conference, LAEDC 2022Assunto: search.filters.subject.Analog Performance

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    Artigo de evento 2 Citação(ões) na Scopus
    Comparative Analysis of Transcapacitances in Asymmetric Self-Cascode and Graded-Channel SOI nMOSFETs
    (2022-07-04) ALVES, C. R.; D'OLIVEIRA, L. M.; Michelly De Souza
    © 2022 IEEE.This work presents a comparative study of the transcapacitances of asymmetric self-cascode (A-SC) and graded-channel (GC) silicon-on-insulator (SOI) nMOSFETs, by means of two-dimensional numerical simulations. Simulated results show that the gate-to-drain capacitance is smaller for the ASC SOI device if compared to the GC SOI device, despite of the applied VDS.