Comparative Analysis of Transcapacitances in Asymmetric Self-Cascode and Graded-Channel SOI nMOSFETs
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Tipo de produção
Artigo de evento
Data de publicação
2022-07-04
Texto completo (DOI)
Periódico
2022 IEEE Latin America Electron Devices Conference, LAEDC 2022
Editor
Texto completo na Scopus
Citações na Scopus
2
Autores
ALVES, C. R.
D'OLIVEIRA, L. M.
Michelly De Souza
Orientadores
Resumo
© 2022 IEEE.This work presents a comparative study of the transcapacitances of asymmetric self-cascode (A-SC) and graded-channel (GC) silicon-on-insulator (SOI) nMOSFETs, by means of two-dimensional numerical simulations. Simulated results show that the gate-to-drain capacitance is smaller for the ASC SOI device if compared to the GC SOI device, despite of the applied VDS.
Citação
ALVES, C. R.; D'OLIVEIRA, L. M.; DE SOUZA, .M. Comparative Analysis of Transcapacitances in Asymmetric Self-Cascode and Graded-Channel SOI nMOSFETs. 2022 IEEE Latin America Electron Devices Conference, LAEDC 2022, Jul. 2022.
Palavras-chave
Keywords
Analog Performance; Asymmetric; Capacitance; MOSFET; Self-cascode; Silicon-On-Insulator
Assuntos Scopus
Analog performance; Asymmetric; Graded channels; MOS-FET; MOSFETs; nMOSFETs; Self-cascode; Silicon on insulator; Silicon-on-insulator devices; Transcapacitance