Comparative Analysis of Transcapacitances in Asymmetric Self-Cascode and Graded-Channel SOI nMOSFETs
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2022-07-04
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ALVES, C. R.
D'OLIVEIRA, L. M.
Michelly De Souza
D'OLIVEIRA, L. M.
Michelly De Souza
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2022 IEEE Latin America Electron Devices Conference, LAEDC 2022
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ALVES, C. R.; D'OLIVEIRA, L. M.; DE SOUZA, .M. Comparative Analysis of Transcapacitances in Asymmetric Self-Cascode and Graded-Channel SOI nMOSFETs. 2022 IEEE Latin America Electron Devices Conference, LAEDC 2022, Jul. 2022.
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© 2022 IEEE.This work presents a comparative study of the transcapacitances of asymmetric self-cascode (A-SC) and graded-channel (GC) silicon-on-insulator (SOI) nMOSFETs, by means of two-dimensional numerical simulations. Simulated results show that the gate-to-drain capacitance is smaller for the ASC SOI device if compared to the GC SOI device, despite of the applied VDS.