Repositório do Conhecimento Institucional do Centro Universitário FEI
 

Engenharia Elétrica

URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/21

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Filtros

2012 - 20182

Configurações

Periódico: search.filters.ispartof.ECS TransactionsAssunto: search.filters.subject.Junctionless transistors

Resultados da Pesquisa

Agora exibindo 1 - 2 de 2
  • N/D
    Artigo de evento 8 Citação(ões) na Scopus
    Application of junctionless nanowire transistor in the self-cascode configuration to improve the analog performance
    (2012-09-02) Rodrido Doria; TREVISOLI, R. D.; Michelly De Souza; Marcelo Antonio Pavanello
    The self-cascode (SC) configuration consists in a series association of two transistors with tied gates usually applied to improve the analog performance of MOS devices. This paper compares the analog parameters of single Junctionless transistors with the ones presented by self-cascode associations composed by two Junctionless devices with identical or different fin widths (symmetric and asymmetric, respectively). The transconductance to the drain current ratio, the Early voltage (VEA) and the intrinsic voltage gain (AV) have been evaluated for both single devices and SC structures. It has been shown that the SC configurations, specially the asymmetric ones, present a strong reduction of the drain conductance (gD) with respect to single devices, resulting in an increase of VEA and AV, which can be higher than 30 dB depending on the bias conditions. © The Electrochemical Society.
  • N/D
    Artigo de evento 1 Citação(ões) na Scopus
    Simulation analysis of the fin height influence on the electrical parameters of junctionless nanowire transistors
    (2018-05-13) RIBEIRO, T. A.; CERDEIRA, A.; Marcelo Antonio Pavanello
    This work analyzes the effects of the fin height on the electrical parameters of junctionless transistors through experimentally calibrated 3-D simulations. Results show that for long channel devices the better compromise is obtained with higher fin height, with higher ION/IOFF and smaller values of SS and DIBL, whereas for short channel ones the better compromise is found with smaller fin height, due to the reduced SS and DIBL and increased ION/IOFF ratio.