Simulation analysis of the fin height influence on the electrical parameters of junctionless nanowire transistors
N/D
Tipo de produção
Artigo de evento
Data de publicação
2018-05-13
Texto completo (DOI)
Periódico
ECS Transactions
Editor
Texto completo na Scopus
Citações na Scopus
1
Autores
RIBEIRO, T. A.
CERDEIRA, A.
Marcelo Antonio Pavanello
Orientadores
Resumo
This work analyzes the effects of the fin height on the electrical parameters of junctionless transistors through experimentally calibrated 3-D simulations. Results show that for long channel devices the better compromise is obtained with higher fin height, with higher ION/IOFF and smaller values of SS and DIBL, whereas for short channel ones the better compromise is found with smaller fin height, due to the reduced SS and DIBL and increased ION/IOFF ratio.
Citação
RIBEIRO, T. A.; CERDEIRA, A.; PAVANELLO, M. A. Simulation analysis of the fin height influence on the electrical parameters of junctionless nanowire transistors. ECS Transactions, v. 85, n. 8, p. 85-90, Mayo, 2018.
Palavras-chave
Keywords
Assuntos Scopus
3D simulations; Electrical parameter; Fin height; Junctionless transistors; Long channel devices; Nanowire transistors; Short channels; Simulation analysis