Engenharia Elétrica
URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/21
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2 resultados
Resultados da Pesquisa
- Simulation of OTA's with double-gate graded-channel MOSFETS using the symmetric doped double-gate model(2010-01-05) CENTRERAS, E.; CERDEIRA, A.; Marcelo Antonio PavanelloIn this paper Operational Transconductance Amplifiers (OTA's) were simulated in SPICE, using the Symmetric Doped Double-Gate Model which includes the capacitances of Double-Gate (DG) transistors. In this work, all the transistors have been simulated using just one model for lightly doped transistor (TLD) and high doped transistor (THd) N-channel devices and P-channel devices. These OTA's show an improvement in the high open-loop voltage gain which is related mainly to the reduction of the drain output conductance which give higher Early voltages for DG GC transistors. ©The Electrochemical Society.
- Impact of substrate rotation and temperature on the mobility and series resistance of triple-gate SOI nMOSFETs(2011-09-02) Michely De Souza; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C.; Marcelo Antonio PavanelloIn this work a comparative experimental analysis of the electron mobility and parasitic source-drain series resistance of triple-gate n-channel MOSFETs as a function of the temperature is carried out. Devices with different fin widths fabricated on standard non-rotated and 45° rotated SOI substrates were analyzed for temperatures ranging from 250 K to 400 K. It is shown that the use of rotated substrate does not affect the subthreshold slope or the threshold voltage variation with temperature of these devices. On the other hand, the change in the conduction plane not only improves the mobility, but also promotes a rise of its variation with temperature. Although the fin width reduction may cause an increase of the series resistance, the increased mobility of rotated devices is responsible for the series resistance roll-off and this reduction becomes larger as the fin is narrowed. © The Electrochemical Society.