Repositório do Conhecimento Institucional do Centro Universitário FEI
 

Engenharia Elétrica

URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/21

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20231

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Periódico: search.filters.ispartof.Journal of Computational ElectronicsAssunto: search.filters.subject.Silicon-on-insulator

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    Artigo 1 Citação(ões) na Scopus
    Comparative of analog performance of transcapacitances in asymmetric self-cascode and graded-channel SOI nMOSFETs
    (2023-01-04) ALVES, C. R.; Michelly De Souza
    © 2023, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.This work presents a comparative study of the transcapacitances of an asymmetric self-cascode (A-SC) and graded-channel (GC) silicon-on-insulator (SOI) nMOSFETs with different gate lengths. This analysis was done by means of two-dimensional numerical simulations. Simulated results show the influence of others transcapacitances on the gate-to-gate capacitance for the ASC SOI device and the GC SOI device.