Comparative of analog performance of transcapacitances in asymmetric self-cascode and graded-channel SOI nMOSFETs
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Tipo de produção
Artigo
Data de publicação
2023-01-04
Texto completo (DOI)
Periódico
Journal of Computational Electronics
Editor
Texto completo na Scopus
Citações na Scopus
1
Autores
ALVES, C. R.
Michelly De Souza
Orientadores
Resumo
© 2023, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.This work presents a comparative study of the transcapacitances of an asymmetric self-cascode (A-SC) and graded-channel (GC) silicon-on-insulator (SOI) nMOSFETs with different gate lengths. This analysis was done by means of two-dimensional numerical simulations. Simulated results show the influence of others transcapacitances on the gate-to-gate capacitance for the ASC SOI device and the GC SOI device.
Citação
ALVES, C. R.; DE SOUZA, M. Comparative of analog performance of transcapacitances in asymmetric self-cascode and graded-channel SOI nMOSFETs.
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Keywords
Analog performance; Asymmetric; Capacitance; MOSFET; Self-cascode; Silicon-on-insulator