Repositório do Conhecimento Institucional do Centro Universitário FEI
 

Engenharia Elétrica

URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/21

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2022 - 20232

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Periódico: search.filters.ispartof.Journal of Computational Electronics

Resultados da Pesquisa

Agora exibindo 1 - 2 de 2
  • Imagem de Miniatura
    Artigo 1 Citação(ões) na Scopus
    Comparative of analog performance of transcapacitances in asymmetric self-cascode and graded-channel SOI nMOSFETs
    (2023-01-04) ALVES, C. R.; Michelly De Souza
    © 2023, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.This work presents a comparative study of the transcapacitances of an asymmetric self-cascode (A-SC) and graded-channel (GC) silicon-on-insulator (SOI) nMOSFETs with different gate lengths. This analysis was done by means of two-dimensional numerical simulations. Simulated results show the influence of others transcapacitances on the gate-to-gate capacitance for the ASC SOI device and the GC SOI device.
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    Artigo 2 Citação(ões) na Scopus
    Pragmatic evaluation of fin height and fin width combined variation impact on the performance of junctionless transistors
    (2022-01-05) RIBEIRO, T. A.; CERDEIRA, A.; ESTRADA, M.; BARRAUD, S.; Marcelo Antonio Pavanello
    This work performs a pragmatic evaluation of the different junctionless devices architectures with channel lengths down to 30 nm on their electrical characteristics. By adopting multiple combinations between the fin height (HFIN) and the fin width (WFIN), chosen from the range of published data in the literature, the devices will operate from double-gate (FinFET like) mode towards to nanowire mode. Additionally, junctionless transistors with and without additional doping at the drain and source extensions were studied. Experimentally calibrated 3D TCAD simulations are used to allow for the study of these several combinations. Results show that for long-channel devices the best performance is obtained for tall and narrow fins, leading to the highest on-to-off current ratio (ION/IOFF) and the smallest values of subthreshold swing and DIBL. On the other hand, for short channel devices, independently of the doping level of the extensions, the best results are found for short HFIN and narrow WFIN, leading to the smaller values of subthreshold swing and DIBL, with a high ION/IOFF ratio. However, the use of doped extensions degrades the overall device performance of short-channel junctionless devices as will be demonstrated.