Repositório do Conhecimento Institucional do Centro Universitário FEI
 

Engenharia Elétrica

URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/21

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20062

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Periódico: search.filters.ispartof.Microelectronics JournalAssunto: search.filters.subject.Analog circuits

Resultados da Pesquisa

Agora exibindo 1 - 2 de 2
  • N/D
    Artigo 16 Citação(ões) na Scopus
    Gain improvement in operational transconductance amplifiers using Graded-Channel SOI nMOSFETS
    (2006) Gimenez S.P.; Pavanello M.A.; Martino J.A.; Flandre D.
    This paper studies the performance of operational transconductance amplifiers (OTAs) fabricated with Graded-Channel (GC) SOI nMOSFETs and designed to provide high open-loop voltage gain or high gain-bandwidth characteristics. Different design targets were taken in account such as similar power dissipation, transconductance over drain current ratio and die area. Comparisons with OTAs made with conventional SOI nMOSFETs, are performed showing that the GC OTAs presents larger open-loop voltage gain without degrading the phase margin, unit gain frequency and slew rate simultaneously with a significant required die area reduction depending on LLD/L ratio used. Circuit simulations and experimental results are used to qualify the analysis. © 2005 Elsevier Ltd. All rights reserved.
  • N/D
    Artigo 5 Citação(ões) na Scopus
    Cryogenic operation of graded-channel silicon-on-insulator nMOSFETs for high performance analog applications
    (2006) Pavanello M.A.; Der Agopian P.G.; Martino J.A.; Flandre D.
    We present in this work an analysis of the low temperature operation of Graded-Channel fully depleted Silicon-On-Insulator (SOI) nMOSFETs for analog applications, in the range of 100-300 K. This analysis is supported by a comparison between the results obtained by two-dimensional numerical simulations and measurements in the whole temperature range under study. The Graded-Channel transistor presents higher Early voltage if compared to the conventional fully depleted SOI nMOSFET, without degrading the transconductance over drain current, at all studied temperatures, leading to a gain larger than 20 dB compared to the conventional SOI. The resulting higher gain lies in the improvement of the electric field distribution and impact ionization rate by the graded-channel structure. © 2005 Elsevier Ltd. All reserved.