Departamento de Física
URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/785
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Resultados da Pesquisa
Artigo de evento 3 Citação(ões) na Scopus Radiation effect mechanisms in electronic devices(2013-12-01) Marcilei Aparecida Guazzelli; Roberto Santos; LEITE, F.; CUNHA, F.; CIRNE, K. H.; MEDINA, N. H.; ADDED, N.; AGUIAR, V. A. P.© Copyright owned by the author(s) under the terms of the Creative Commons Attribution-NonCommercial-ShareAlike Licence.In this work, P- and N-MOSFETs (Metal Oxide Semiconductor Field Effect Transistor) were submitted to X-ray and ion beams. CD 4007, a commercial off-the-shelf integrated circuit composed of six transistors, three P-type and three N-type, in a single package, was used. The integrated circuits were exposed to 60 MeV 35Cl ion beams using the São Paulo 8UD Pelletron Accelerator and 10 keV X-ray radiation, using a Shimadzu XRD-7000 X-ray diffractometer. The total dose effects due to ionizing radiation in MOSFET were analyzed. The results indicate Vth depends on the absorbed dose and dose rate. The deviation of Vth is higher for P-MOS, while the change in slope is higher for N-MOS. TID (Total Ionizing Dose) caused by heavy ion does not seem to affect mobility. After heat treatment, the device establishes a different equilibrium state compared to that achieved at room temperature. The heat treatment worsens the P-type characteristics and improves the N-type.- COTS Tolerant to Total Ionizing Dose (TID): AlGaN/GaNbased transistor 10 KeV X-ray Analysis(2022-11-09) BOAS, A. C.V.; ALBERTON, S. G.; DE MELO, M. A. A.; Roberto Santos; Renato Giacomini; MEDINA, N. H.; SEIXAS, L. E.; FINCO, S.; PALOMO, F. R.; Marcilei Aparecida Guazzelli© 2022 Institute of Physics Publishing. All rights reserved.Gallium nitride commercial transistors (GaN FET) are great candidates as power devices tolerant to the effects of Total ionizing dose (TID). Therefore, we have evaluated its robustness by analysing parameters in its characteristic parameters. Devices were exposed to a 10 keV X-ray source accumulating a total of 350 krad(Si). However, results indicate that the tested components are more tolerant to the effects of TID when in on-state mode rather than the off-mode, that is, when the device is working, which is good news for COTS applications in environments subject to the effects of ionizing radiation.
- X-ray radiation effects in overlapping circular-gate MOSFET's(2011-09-23) DE LIMA, J. A.; Marcilei Aparecida Guazzelli; CIRNE, K. H.; Roberto Santos; MEDINA, N. H.IV-characteristics from ELT Overlapping Circular-Gate Transistors (O-CGT's) and rectangular-gate transistors are cross-checked after X-ray exposure. No degradation on O-CGT subthreshold behavior observed for doses up to 2.3 Grad. Devices were prototyped on standard 0.35 μm CMOS process. © 2011 IEEE.
- Electronic system for data acquisition to study radiation effects on operating MOSFET transistors(2014-09-01) DE OLIVEIRA, J. A.; DE MELO, M. A. A.; Marcilei Aparecida Guazzelli; MEDINA, N. H.© 2014 AIP Publishing LLC.In this work we present the development of an acquisition system for characterizing transistors under X-ray radiation. The system is able to carry out the acquisition and to storage characteristic transistor curves. To test the acquisition system we have submitted polarized P channel MOS transistors under continuous 10-keV X-ray doses up to 1500 krad. The characterization system can operate in the saturation region or in the linear region in order to observe the behavior of the currents or voltages involved during the irradiation process. Initial tests consisted of placing the device under test (DUT) in front of the X-ray beam direction, while its drain current was constantly monitored through the prototype generated in this work, the data are stored continuously and system behavior was monitored during the test. In order to observe the behavior of the DUT during the radiation tests, we used an acquisition system that consists of an ultra-low consumption16-bit Texas Instruments MSP430 microprocessor. Preliminary results indicate linear behavior of the voltage as a function of the exposure time and fast recovery. These features may be favorable to use this device as a radiation dosimeter to monitor low rate X-ray.