Departamento de Física
URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/785
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Resultados da Pesquisa
- Analog performance of standard and uniaxial strained triple-gate SOI FinFETs under x-ray radiation(2014) Bordallo C.C.M.; Teixeira F.F.; Silveira M.A.G.; Martino J.A.; Agopian P.G.D.; Simoen E.; Claeys C.© 2014 IOP Publishing Ltd.The influence of x-ray irradiation on the main digital and analog parameters of triple gate silicon-on- insulator FinFETs is investigated for unstrained and uniaxially strained devices. Comparing the p- and n-MuGFET response to radiation, x-rays can be more harmful for nMuGFETs than for the p-type counterparts due to the back-interface leakage current, which is generated by the positive charges trapped in the buried oxide. However, in pMuGFETs, the radiation tends to suppress the parasitic back-conduction, resulting in an improvement of the device performance.