Departamento de Física
URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/785
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2 resultados
Resultados da Pesquisa
- Boosting the total ionizing dose tolerance of digital switches by using OCTO SOI MOSFET(2015) De Souza Fino L.N.; Davini Neto E.; Da Silveira M.A.G.; Renaux C.; Flandre D.; Gimenez S.P.© 2015 IOP Publishing Ltd.This paper performs an experimental comparative study of the total ionizing dose effects due to the x-ray radiation between the silicon-on-insulator (SOI) metal-oxide semiconductor field-effect transistors (MOSFETs) manufactured with octagonal gate geometry and the standard counterpart. Our main focus is on integrated transceivers for wireless communications and smart-power dc/dc converters for mobile electronics, where the transistor is used as the key switching element. It is shown that this innovative layout can reduce the total ionizing dose (TID) effects due to the special characteristics of the OCTO SOI MOSFET bird's beak regions, where longitudinal electrical field lines in these regions are not parallel to the drain and source regions. Consequently, the parasitic MOSFETs associated with these regions are practically deactivated.
- Analog performance of standard and uniaxial strained triple-gate SOI FinFETs under x-ray radiation(2014) Bordallo C.C.M.; Teixeira F.F.; Silveira M.A.G.; Martino J.A.; Agopian P.G.D.; Simoen E.; Claeys C.© 2014 IOP Publishing Ltd.The influence of x-ray irradiation on the main digital and analog parameters of triple gate silicon-on- insulator FinFETs is investigated for unstrained and uniaxially strained devices. Comparing the p- and n-MuGFET response to radiation, x-rays can be more harmful for nMuGFETs than for the p-type counterparts due to the back-interface leakage current, which is generated by the positive charges trapped in the buried oxide. However, in pMuGFETs, the radiation tends to suppress the parasitic back-conduction, resulting in an improvement of the device performance.