Departamento de Física
URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/785
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Resultados da Pesquisa
Artigo de evento 3 Citação(ões) na Scopus Radiation effect mechanisms in electronic devices(2013-12-01) Marcilei Aparecida Guazzelli; Roberto Santos; LEITE, F.; CUNHA, F.; CIRNE, K. H.; MEDINA, N. H.; ADDED, N.; AGUIAR, V. A. P.© Copyright owned by the author(s) under the terms of the Creative Commons Attribution-NonCommercial-ShareAlike Licence.In this work, P- and N-MOSFETs (Metal Oxide Semiconductor Field Effect Transistor) were submitted to X-ray and ion beams. CD 4007, a commercial off-the-shelf integrated circuit composed of six transistors, three P-type and three N-type, in a single package, was used. The integrated circuits were exposed to 60 MeV 35Cl ion beams using the São Paulo 8UD Pelletron Accelerator and 10 keV X-ray radiation, using a Shimadzu XRD-7000 X-ray diffractometer. The total dose effects due to ionizing radiation in MOSFET were analyzed. The results indicate Vth depends on the absorbed dose and dose rate. The deviation of Vth is higher for P-MOS, while the change in slope is higher for N-MOS. TID (Total Ionizing Dose) caused by heavy ion does not seem to affect mobility. After heat treatment, the device establishes a different equilibrium state compared to that achieved at room temperature. The heat treatment worsens the P-type characteristics and improves the N-type.- First successful SEE measurements with heavy ions in Brazil(2014-07-18) MEDINA, N. H.; Marcilei Aparecida Guazzelli; ADDED, N.; AGUIAR. V. A . P.; Renato Giacomini; MACHIONE, E. L. A.; DE MELO, M. A. A.; SANTOS, R. B. B.; SEIXAS, L. E.© 2014 IEEE.In this work, the first successful SEE measurements with heavy ions in Brazil is reported. The heavy ions were produced at the São Paulo 8 UD Pelletron accelerator. 12C, 16O, 19F, 28Si, 35Cl, 63Cu and 107Ag heavy ion beams were used to test a commercial off-the-shelf transistor. During irradiation, the response of a pMOS transistor was continuously monitored to measure the SEE events. In order to achieve a uniform low intensity beam the heavy ions were Rutherford scattered at 15 by a 275 μg/cm2 gold foil.
- X-ray-induced upsets in a Xilinx spartan 3E FPGA(2015-12-24) Marcilei Aparecida Guazzelli; Roberto Santos; LEITE, F. G. H.; ARAÚJO, N. E.; MEDINA, N. H.; PORCHER, B. C.; AGUIAR, V. A P.; ADDED, N.; VARGAS. F.© 2015 IEEE.As the use of Field Programmable Gate Arrays (FPGAs) in space and in other strategic areas increases, concerns about their tolerance to radiation also increases. This work reports the observation of soft and hard errors in a Xilinx Spartan-3E commercial off-The-shelf FPGA when exposed to low-dose rate, low energy X-rays during a dynamic test in which a LEON 3 soft-core processor was mapped in the FPGA.
- A commercial off-the-shelf pMOS transistor as X-ray and heavy ion detector(2015) Silveira M.A.G.; Melo M.A.A.; Aguiar V.A.P.; Rallo A.; Santos R.B.B.; Medina N.H.; Added N.; Seixas L.E.; Leite F.G.; Cunha F.G.; Cirne K.H.; Giacomini R.; de OLIVEIRA J.A.© Published under licence by IOP Publishing Ltd.Recently, p-channel metal-oxide-semiconductor (pMOS) transistors were suggested as fit for the task of detecting and quantifying ionizing radiation dose. Linearity, small detection volume, fast readout, portability, low power consumption and low radiation attenuation are some of the pMOS advantages over PIN diode and thermoluminiscent dosimeters. A hand-held measurement system using a low power commercial off-the-shelf pMOSas the sensor would have a clear advantage due to the lower cost incurred by a standard technological process. In this research work, we tested the commercial device 3N163 regarding its behaviouras an X-ray sensor, as well as its possible application as a heavy-ion detector. To study the radiation effects of X-rays, a XRD-7000 (Shimadzu) X-ray diffraction setup was used to produce 10-keV effective energy photons. Heavy ions tests involved 12C, 16O, 19F, 28Si, 35Cl, 63Cu and 107Ag beams scattered at 15° by a 275 μg/cm2 gold target, which provide LETs (Linear Energy Transfer) from 4 to 40 MeV/mg/cm2. The signal readout was done using a 1 GHz oscilloscope with a 10-Gsamples/s conversion rate, high enough to permit the recording of transient pulses in the drain current. In this case, an ion can cause a current signal proportional to the ion beam used. Through this study it was found that a simple commercial pMOS device can be reliably used as a detector of X-rays as well as heavy ion detector.