Substrate Effect Evaluation by the Analysis of Intrinsic Capacitances in SOI UTBB Transistors

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dc.contributor.authorCOSTA, F. J.
dc.contributor.authorDORIA, R. T.
dc.contributor.authorRodrigo Trevisoli Doria
dc.date.accessioned2021-11-25T22:03:10Z
dc.date.available2021-11-25T22:03:10Z
dc.date.issued2020-05-26
dc.description.abstractThe main goal of this paper is to present the behavior of the substrate effect in Ultra-Thin Body and Buried Oxide (UTBB) SOI MOSFETs with respect to the back gate bias (VSUB) through DC and AC simulations validated to experimental data. Different ground plane (GP) arrangements have been considered in order to enhance the analysis. It has been shown that the substrate effect is strongly influenced by the reduction of the back gate bias and, that the capacitive coupling of the structure presents a different behavior with respect of each kind of GP configuration as the back gate bias is varied. Finally, it has been shown that the GP below the source and drain regions contributes significantly to the overall capacitive coupling of the transistors.
dc.description.firstpage1
dc.description.issuenumber1
dc.description.lastpage6
dc.description.volume15
dc.identifier.citationCOSTA, F. J.; TREVISOLI, R.; DORIA, R. T.. Substrate effect evaluation by the Analysis of Intrinsic capacitances in SOI UTBB Transistors. JICS. JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS (ED. PORTUGUÊS), v. 15, n. 1, p. 1-6, 2020.
dc.identifier.doi10.29292/jics.v15i1.118
dc.identifier.issn1872-0234
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3478
dc.relation.ispartofJICS. JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS (ED. PORTUGUÊS)
dc.rightsAcesso Aberto
dc.rights.licenseOpen Journal Systems "Este é um artigo publicado em acesso aberto sob uma licença de código aberto (GPL v2). Fonte: https://jics.org.br/ojs/index.php/JICS/article/view/118. Acesso em: 25 nov. 2021.
dc.subjectUTBB
dc.subjectSubstrate Effect
dc.subjectBody Factor
dc.titleSubstrate Effect Evaluation by the Analysis of Intrinsic Capacitances in SOI UTBB Transistorspt_BR
dc.typeArtigopt_BR
fei.scopus.citations2
fei.scopus.eid2-s2.0-85085870752
fei.scopus.updated2024-03-04
fei.source.urlhttps://jics.org.br/ojs/index.php/JICS/article/view/118
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