The impact of a (Si)Ge heterojunction on the analog performance of vertical Tunnel FETs

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dc.contributor.authorAGOPIAN, P. G. D.
dc.contributor.authorMARTINO, J. A.
dc.contributor.authorVANDOOREN, A.
dc.contributor.authorROOYACKERS, R.
dc.contributor.authorSIMON, E.
dc.contributor.authorTHEAN, A.
dc.contributor.authorCLAEYS, C.
dc.date.accessioned2022-01-12T22:00:55Z
dc.date.available2022-01-12T22:00:55Z
dc.date.issued2014-10-05
dc.description.abstract© The Electrochemical Society.This work studies the impact of the germanium content in the source on analog parameters of vertical nanowire Tunnel-FETs (NW-TFETs) operating in a temperature range from room temperature to 150°C. Although, the higher the germanium amount in the source the higher the on-state current, with respect to the analog applications the NW-TFETs performance depends mainly on the predominant conduction mechanism. At room temperature, TFETs for which BTBT is the predominant transport mechanism, present better analog performance, while at high temperature the device that is more trap-assisted-tunneling dependent presents the best performance due to its higher immunity to the drain electric field.
dc.description.firstpage127
dc.description.issuenumber11
dc.description.lastpage133
dc.description.volume64
dc.identifier.citationAGOPIAN, P. G. D.; MARTINO, J. A.; VANDOOREN, A.; ROOYACKERS, R.; SIMON, E.; THEAN, A.; CLAEYS, C. The impact of a (Si)Ge heterojunction on the analog performance of vertical Tunnel FETs. ECS Transactions, v. 64, n. 11, p. 127-133, Nov. 2014.
dc.identifier.doi10.1149/06411.0127ecst
dc.identifier.issn1938-6737
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4033
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleThe impact of a (Si)Ge heterojunction on the analog performance of vertical Tunnel FETs
dc.typeArtigo de evento
fei.scopus.citations0
fei.scopus.eid2-s2.0-84921322629
fei.scopus.subjectAnalog applications
fei.scopus.subjectAnalog parameters
fei.scopus.subjectAnalog performance
fei.scopus.subjectConduction Mechanism
fei.scopus.subjectGermanium contents
fei.scopus.subjectTransport mechanism
fei.scopus.subjectTrap assisted tunneling
fei.scopus.subjectVertical nanowires
fei.scopus.updated2025-02-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84921322629&origin=inward
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